Last Updated on 2/21/2008
By Helena Armandula
Email: ahelena@ligo.caltech.edu
|
Serial No. |
Size |
Substrate |
Substrate Drawing Type B |
Coating / Process |
Location |
Polisher/ Vendor |
Features |
|
S/N 1 |
3" x 0.1" |
X |
Part was cleaned
and annealed. Now coated |
MIT |
Mindrum |
Weld produced significant surface damage |
|
|
S/N 2 |
3" x 0.1" |
X |
Part was cleaned
and annealed. |
MIT |
Mindrum |
No damage from weld |
|
|
S/N 1 |
3" x 0.1" |
Ta2O5/SiO2 1/4 wave
- 2 layers |
MIT |
Mindrum-Re-polished by Wave Precision |
|
||
|
S/N 2 |
3" x 0.1" |
Ta2O5/SiO2 30 layers |
|
Mindrum-Re-polished by Wave Precision |
|
||
|
S/N 3 |
3" x 0.1" |
Ta2O5/SiO2 30 layers |
|
Mindrum-Re-polished by Wave Precision |
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||
|
S/N 4 |
3" x 0.1" |
Ta2O5/SiO2 2 layers |
MIT |
Mindrum-Re-polished by Wave Precision |
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||
|
S/N 5 |
3" x 0.1" |
Coating run failed |
Caltech |
Wave Precision |
|
||
|
S/N 6 |
3" x 0.1" |
Coating run failed |
Caltech |
Wave Precision |
|
||
|
S/N 7 |
3" x 0.1" |
|
MIT |
Wave Precision |
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||
|
S/N 8 |
3" x 0.1" |
Coated with Nb2O5 / SiO2 |
MLD |
Wave Precision |
Baked at 400º C for 1 hr |
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|
S/N1A |
3" x 0.1" |
Ta2O5/SiO2 |
MIT |
Wave Precision |
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||
|
S/N 2A |
3" x 0.1" |
Ta2O5 / SiO2 |
MIT |
Wave Precision |
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||
|
S/N 3A |
3" x 0.1" |
Ta2O5 / Al2O3 |
MIT |
Wave Precision |
Parts have been coated for 64ppm Transmission Annealed at 350º C |
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|
S/N 4A |
3" x 0.1" |
Ta2O5 / Al2O3 |
MIT |
Wave Precision |
Parts have been
coated for 64ppm Transmission |
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|
S/N 9 |
3" x 0.1" |
|
MIT |
Wave Precision |
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||
|
S/N 10 |
3" x 0.1" |
|
MIT |
Wave Precision |
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||
|
S/N 13 |
3" x 0.1" |
Ta2O5/SiO2 30 layers |
MIT |
Wave Precision |
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||
|
S/N 14 |
3" x 0.1" |
Ta2O5/SiO2 30 layers |
MIT |
Wave Precision |
|
||
|
S/N 15 |
3" x 0.1" |
Ta2O5/SiO2 30 layers |
|
Wave Precision |
Annealed at MLD 450º C |
||
|
S/N 16 |
3" x 0.1" |
Ta2O5/SiO2 30 layers |
MIT |
Wave Precision |
Annealed at MLD 450º C |
||
|
S/N 17 |
3" x 0.1" |
Coated
with |
MIT |
Wave Precision |
Annealed at 400º C for 1 hr |
||
|
S/N 18 |
3" x 0.1" |
Coated with 30 layers doped Ta2O5/SiO2 – Formula #1 |
MIT |
Wave Precision |
SMA run # 02074/1 |
||
|
S/N 19 |
3" x 0.1" |
30 layers |
MIT |
Wave Precision |
Annealed at 350º C for 12 hr |
||
|
S/N 20 |
3" x 0.1" |
30 layers |
|
Wave Precision |
Annealed at 350º C for 12 hr |
||
|
S/N 22 |
3" x 0.1" |
|
|
|
MIT |
Wave Precision |
One side ion beam etched |
|
S/N 23 |
3" x 0.1" |
|
|
|
MIT |
Wave Precision |
Both sides etched at CSIRO |
|
S/N 24 |
3" x 0.1" |
|
|
Un-Coated |
MIT |
Wave Precision |
Baked at 600º C (control for Formula #2) |
|
S/N 25 |
3" x 0.1" |
|
LMA - 30 layers – ¼ wave Ta2O5*/SiO2 * Formula 2 |
MIT |
Wave Precision |
SMA run #04057/21 |
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S/N 26 |
3" x 0.1" |
|
|
30 layers Al2O3 / SiO2 |
MIT |
Wave Precision |
Baked at 400º C |
|
S/N 27 |
3" x 0.1" |
|
|
30 layers Al2O3 / SiO2 |
MIT |
Wave Precision |
Baked at 400º C |
|
S/N 28 |
3" x 0.1" |
|
|
Lost during Hafnium run (HfL)15 |
|
Wave Precision |
SMA run# 0401821 Re-polished |
|
S/N 30 |
3" x 0.1" |
|
|
(HL)15 Formula 3 |
|
|
SMA run #04069/3 |
|
S/N 31 |
3" x 0.1" |
|
|
Lost during Hafnium run (HfL)15 |
|
Wave Precision |
SMA run #0402621 Re-polished |
|
S/N 32 |
3" x 0.1" |
|
|
CSIRO – 30 layers – ¼ wave Ta2O5/SiO2 |
MIT |
Wave Precision |
Ion assisted 1st run - TaO = 2.140 SiO =
1.474 |
|
S/N 33 |
3" x 0.1" |
|
|
CSIRO - 30 layers – ¼ wave Ta2O5/SiO2 |
MIT |
Wave Precision |
Ion assisted 1st run - TaO = 2.140 SiO =
1.474 |
|
S/N 34 |
3" x 0.1" |
|
|
LMA – 30 layers - ¼ wave Ta2O5*/SiO2 * Formula 3 |
MIT |
Wave Precision |
SMA run #04076/21 |
|
S/N 35 |
3" x 0.1" |
|
|
LMA – 30 layers - ¼ wave Ta2O5*/SiO2 * Formula 4 |
MIT |
|
SMA run #C040682
|
|
S/N 44 |
3" x 0.1" |
|
|
CSIRO |
MIT |
|
Oxygen deficient - Poor stoichiometry |
|
S/N 45 |
3" x 0.1" |
|
|
CSIRO- 30 layers Ta2O5 / SiO2 |
MIT |
|
Xe run |
|
S/N 16B |
3" x 0.1" |
|
|
CSIRO |
Andri |
|
Silica doped Ta2O5 |
|
REO1 |
3" x 0.1" |
|
|
CSIRO |
Andri |
REO |
30 lyrs. HfO2/SiO2 - 300 C for 24hrs |
|
REO2 |
3" x 0.1" |
|
|
CSIRO |
Andri |
REO |
30 lyrs. 30% SiO2 in HfO2/SiO2 -550C for 24hrs |
|
R605 |
3" x 0.1" |
|
|
CSIRO |
Andri |
REO |
30 layers-TiO2-doped-Ta2O5 (~40%) and SiO2 Annealed at 600 C for 24 hrs |
* Note: All thin substrates need to be masked before coating MASK
|
Serial No. |
Size |
Substrate specification |
Substrate Drawing |
Coating / Process |
Location |
Polisher / Vendor |
Features |
|
S/N 1 |
3" x 1" |
Ta2O5/SiO2 |
|
Mindrum-Re-polished by Wave Precision |
Annealed at 600º C |
||
|
S/N 2 |
3" x 1" |
Cleaning /
Annealing |
MIT |
Mindrum-Re-polished by Wave Precision |
Repolished at OCI |
||
|
S/N 3 |
3" x 1" |
Ta2O5/SiO2
1/4 wave - |
|
Mindrum-Re-polished by Wave Precision |
Annealed at 600º C |
||
|
S/N 4 |
3" x 1" |
Ta2O5/SiO2 |
|
Mindrum-Re-polished by Wave Precision |
Annealed at 600º C |
||
|
S/N 1 |
3" x 1" |
|
MLD |
Wave Precision |
|
||
|
S/N 2 |
3" x 1" |
|
Stanford |
Wave Precision |
|
||
|
S/N 3 |
3" x 1" |
Ta2O5/SiO2 |
|
Wave Precision |
Absorption: |
||
|
S/N 4 |
3" x 1" |
Ta2O5/SiO2 |
|
Wave Precision |
Identified as IV on barrel |
||
|
S/N 5 |
3" x 1" |
Coating run failed |
MIT |
Wave Precision |
Identified as 5 on barrel |
||
|
S/N 6 |
3" x 1" |
Ta2O5/SiO2 30 layers |
|
Wave Precision |
Absorption: |
||
|
S/N 7 |
3" x 1" |
Ta2O5/SiO2 30 layers |
|
Wave Precision |
Annealed at 600º C |
||
|
S/N 8 |
3" x 1" |
Ta2O5/SiO2 30 layers |
|
Wave Precision |
Annealed at 600º C |
||
|
S/N 9 |
3" x 1" |
Coated with Nb2O5 / SiO2 |
MLD |
Wave Precision |
Baked at 400º C for 1 hr |
||
|
S/N 10 |
3" x 1" |
Coated with Nb2O5 / SiO2 |
MLD |
Wave Precision |
Baked at 400º C for 1 hr |
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|
S/N 11 |
3" x 1" |
Ta2O5 / Al2O3 |
|
Wave Precision |
Identified as XI on barrel. Parts have been coated for 64ppm Trans. Baked at 350º C |
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|
S/N 12 |
3" x 1" |
|
Stanford |
Wave Precision |
Identified as XII on barrel |
||
|
S/N 13 |
3" x 1" |
To be annealed for Ta2O5/SiO2 |
|
Wave Precision |
Annealed at MLD 450º C |
||
|
S/N 14 |
3" x 1" |
Ta2O5/SiO2 60 layers - SMA |
|
Wave Precision |
Identified as XIV on barrel. Annealed at 600º C |
||
|
S/N 15 |
3" x 1" |
Ta2O5 / Al2O3 |
|
Wave Precision |
Identified as XV on barrel. Parts have been coated for 64ppm Trans. Baked at 350º C |
||
|
S/N 16 |
3" x 1" |
30 layers |
|
Wave Precision |
Annealed at 350º C for 12 hr |
||
|
S/N 17 |
3" x 1" |
Annealed at 350º C as control for Ta2O5 / Al2O3 |
|
Wave Precision |
Annealed for 12 hr, then annealed in |
||
|
S/N 18 |
3" x 1" |
Ta2O5/SiO2 30 layers-MLD |
|
Wave Precision |
Annealed at MLD 450º C |
||
|
S/N 19 |
3" x 1" |
Ta2O5/SiO2 30 layers-MLD |
|
Wave Precision |
Annealed at MLD 450º C |
||
|
S/N 20 |
3" x 1" |
Annealed at MLD |
|
Wave Precision |
Baked at 400º C for 1 hr |
||
|
S/N 21 |
3” x 1” |
Annealed at WP |
|
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S/N 22 |
3" x 1" |
|
|
MLD 30 layers Al2O3 / SiO2 |
|
Wave Precision |
Baked at 400º C |
|
S/N 23 |
3" x 1" |
|
|
SMA - 30 layers F1 – Ta2O5 / SiO2 |
|
Wave Precision |
Annealed at 600º C SMA run #03014 |
|
S/N 27 |
3" x 1" |
30 layers |
|
Wave Precision |
Annealed at 350º C for 12 hr |
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|
S/N 28 |
3" x 1" |
|
|
MLD 30 layers Al2O3 / SiO2 |
|
Wave Precision |
Baked at 400º C |
|
S/N 29 |
3" x 1" |
|
|
30 layers - LMA F4 – Ta2O5 / SiO2 |
|
Wave Precision |
Absorption measured at LMA: 3.0 ppm SMA run # C040681 |
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S/N 30 |
3" x 1" |
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|
|
Wave Precision |
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S/N 31 |
3" x 1" |
|
|
30 layers - LMA F5 – Ta2O5 / SiO2 |
|
|
Coated in the VIRGO coater – Absorption measured at LMA: 0.9 ppm SMA run # C040762 |
|
S/N 33 |
3" x 1" |
|
|
30 layers - LMA F2 – Ta2O5 / SiO2 |
|
Wave Precision |
Absorption measured at LMA: 1.1 ppm SMA run # 04056/21 |
|
S/N 34 |
3" x 1" |
|
|
SCIRO - First coating |
|
|
Annealed at 300 C for 2 hours- Absorption ~162 ppm to 169 ppm |
|
S/N 35 |
3" x 1" |
|
|
30 layers - LMA F3 – Ta2O5 / SiO2 |
|
Wave Precision |
Absorption measured at LMA: 1.0 ppm SMA run # 04068/3 |
|
S/N 36 |
3" x 1" |
|
|
Annealed at LMA |
|
Wave Precision |
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S/N 39 |
3" x 1" |
|
|
Coated at CSIRO |
|
|
4.65 microns of tantala on it which has been annealed to
approx zero stress (0 +/- 10 MPa). |
|
S/N 44 |
3" x 1" |
|
|
SiO2 – 25 layer |
|
Wave Precision |
Annealed at 400º C SMA run #C0402021 |
|
S/N 45 |
3" x 1" |
|
|
Single layer - LMA F1 –Doped Ta2O5 |
|
Wave Precision |
Annealed at 400º C SMA run # 0402321 |
|
S/N 47 |
3" x 1" |
|
|
(HfL)15 |
|
Wave Precision |
Coating broke down SMA run #0401721- 500C anneal |
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S/N 48 |
3" x 1" |
|
|
CSIRO - 30 layers Ta2O5 / SiO2 |
|
|
Sputtered with Xenon |
|
|
3" x 1" |
|
|
Ta2O5 thick layer - LMA |
|
Wave Precision |
Annealed at 600º C – Coating cracked |
|
No S/N |
3" x 1" |
|
|
CSIRO –
30 layer Ta2O5 / SiO2 |
|
Wave Precision |
|
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S/N IPO12 |
3" x 1" |
|
|
CSIRO –
30 layer
|
|
REO |
30 lyrs. HfO2/SiO2 - 300 C for 24hrs |
|
S/N 212
|
3" x 1" |
|
|
CSIRO –
30 layer
|
|
REO |
30 lyrs. 30% SiO2 in HfO2/SiO2 -550C for 24hrs |
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For "Q" measurement results see: LIGO-MIT Coating Experiment
Optical Absorption has been measured at Stanford University
Coated samples are 1" dia.x 0.250" thick superpolished fused silica substrates. (Standard Wave
Precision Part # GO-FS100-1)
|
Serial No. |
Coating Material |
Annealing Temp. |
PCI Loss (PPM) |
Notes |
|
5584 |
Ta2O5/SiO2 |
250º C |
1.71 |
|
|
5700 |
" |
" |
1.65 |
|
|
0358 |
" |
" |
1.65 |
|
|
5638 |
" |
300º C |
1.24 |
|
|
5698 |
" |
" |
1.30 |
|
|
0321 |
" |
" |
1.15 |
|
|
5721 |
" |
350º C |
0.75 |
|
|
5723 |
" |
|
0.78 |
~4mm wide bump to 3.2ppm |
|
0372 |
" |
|
0.70 |
|
|
8203 |
" |
400º C |
0.65 |
|
|
8107 |
" |
450º C |
0.44 |
|
|
8174 |
" |
450º C |
0.43 |
|
|
8233 |
" |
500º C |
0.40 |
2mm wide bump to 4ppm |
|
8118 |
" |
not annealed |
11.50 |
|
|
|
|
|
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|
5601 |
Nb2O5/SiO2 |
300º C |
1.17 |
|
|
-300 |
" |
" |
1.30 |
|
|
0230 |
" |
" |
1.18 |
|
|
5695 |
" |
350º C |
0.78 |
|
|
6366 |
" |
" |
0.76 |
|
|
-350 |
" |
" |
0.76 |
|
|
5592 |
" |
400º C " |
0.45 |
|
|
6673 |
" |
" |
0.42 |
>2mm wide bump to 1.1ppm |
|
-400 |
" |
" |
0.40 |
|
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|
5624 |
ZrO2/SiO2 |
300º C |
21.70 |
|
|
5716 |
" |
" |
22.85 |
|
|
0342 |
" |
" |
23.50 |
|
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5697 |
" |
350º C |
19.95 |
|
|
5046 |
" |
" |
19.80 |
|
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0363 |
" |
" |
19.20 |
|
|
5635 |
" |
400º C |
11.60 |
|
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5696 |
" |
" |
12.03 |
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|
0290 |
" |
" |
11.60 |
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|
5564 |
Ta2O5/SiO2 |
300º C |
3.24 |
|
|
5572 |
" |
" |
2.67 |
|
|
0689 |
" |
" |
3.29 |
|
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5567 |
" |
350º C |
1.41 |
|
|
5583 |
" |
" |
1.46 |
Localized bumps to 15ppm |
|
0687 |
" |
" |
2.19 |
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5701 |
" |
400º C |
1.17 |
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5728 |
" |
" |
1.13 |
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0693 |
" |
" |
1.84 |
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|
9286 |
HfO2 |
No anneal |
|
LMA-30 layers |
|
9400 |
HfO2 |
400º C |
|
LMA -30 layers |
|
9319 |
HfO2 |
400º C |
|
LMA-30 layers |
|
9321 |
HfO2 |
500º C |
|
LMA-30 layers |
|
#4 |
Doped Ta2O5 |
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Al2O3 subst.C-axis-LMA |
|
#3 |
Doped Ta2O5 |
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|
Al2O3 subst.C-axis-LMA |
|
8134 |
Formula 2 |
|
|
LMA-Run 04056/12 |
|
8191 |
Formula 2 |
|
|
LMA-Run 04056/12 |
|
8139 |
Formula 3- sapphire |
|
13.4 |
LMA-Run 04075/11 |
|
9353 |
Formula 1-Single layer H* |
|
|
LMA-Run 04023/11 |
|
9396 |
Formula 1- Single layer H* |
|
|
LMA-Run 04023/13 |
|
9314 |
Single layer SiO2 |
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|
LMA-Run 04020/11 |
|
9348 |
Single layer SiO2 |
|
|
LMA-Run 04020/11 |
|
11432 |
30 layers |
300 C -24hrs |
90.9 |
HfO2/SiO2 - CSIRO |
|
11372 |
30 layers |
300 C -24hrs |
92.6 |
HfO2/SiO2 - CSIRO |
|
10317 |
30 layers |
300 C -24hrs |
73.6 |
HfO2/SiO2 - CSIRO |
|
10353 |
30 layers |
300 C -24hrs |
79 |
HfO2/SiO2 - CSIRO |
|
018-Q1 |
30 layers |
550 C - 24 hrs |
8 |
70% HfO 30% SiO/SiO2 CSIRO |
|
014-Q1 |
30 layers |
550 C - 24 hrs |
7.2 |
70% HfO 30% SiO/SiO2 CSIRO |
|
024-Q1 |
30 layers |
550 C - 24 hrs |
6.85 |
70% HfO 30% SiO/SiO2 CSIRO |
|
11251 |
30 layers |
550 C - 24 hrs |
6.85 |
70% HfO 30% SiO/SiO2 CSIRO |
|
1.0-037-01 |
30 layers |
600 C for 24 hours |
2.53 |
~20%TiO2/Ta2O5/SiO2 CSIRO |
|
11439 |
30 layers |
600 C for 24 hours |
1.19 |
~40%TiO2/Ta2O5/SiO2 CSIRO |
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